Γ to X Transport of Photoexcited Electrons in Type II GaAs/AlAs Multiple Quantum Well Structures

Authors

Peter N. Saeta, Harvey Mudd CollegeFollow
John F. Federici, AT&T Bell Laboratories
R. J. Fischer, AT&T Bell Laboratories
Benjamin I. Greene, AT&T Bell Laboratories
L. Pfeiffer, AT&T Bell Laboratories
R. C. Spitzer, AT&T Bell Laboratories
B. A. Wilson, AT&T Bell Laboratories

Document Type

Article

Department

Physics (HMC)

Publication Date

4-1989

Abstract

We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.

Comments

This article is also available from the American Institute of Physics at http://dx.doi.org/10.1063/1.101302.

Rights Information

© 1989 American Institute of Physics

Terms of Use & License Information

Terms of Use for work posted in Scholarship@Claremont.

DOI

10.1063/1.101302

Recommended Citation

“Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures,” P. Saeta, J. F. Federici, R. J. Fischer, B. I. Greene, L. Pfeifer, R. C. Spitzer, and B. A. Wilson, Appl. Phys. Lett. 54, 1681 (1989). doi: 10.1063/1.101302