We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.
© 1989 American Institute of Physics
“Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures,” P. Saeta, J. F. Federici, R. J. Fischer, B. I. Greene, L. Pfeifer, R. C. Spitzer, and B. A. Wilson, Appl. Phys. Lett. 54, 1681 (1989). doi: 10.1063/1.101302