Far-Infrared Light Generation at Semiconductor Surfaces and its Spectroscopic Applications

Authors

Benjamin I. Greene, AT&T Bell Laboratories
Peter N. Saeta, Harvey Mudd CollegeFollow
Douglas R. Dykaar, AT&T Bell Laboratories
Stefan Schmitt-Rink, AT&T Bell Laboratories
Shun Lien Chuang, University of Illinois at Urbana-Champaign

Document Type

Article

Department

Physics (HMC)

Publication Date

10-1992

Abstract

Femtosecond pulses of far-infrared (FIR) radiation can be generated in the depletion field near semiconductor surfaces under optical excitation via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This coherent mechanism differs from previously proposed incoherent mechanisms and is expected to dominate for nonresonant excitation as well as for resonant excitation with optical fields. Two femtosecond time-resolved spectroscopic applications using a visible excitation pulse and a FIR probe pulse are described.

Rights Information

© 1992 IEEE

Terms of Use & License Information

Terms of Use for work posted in Scholarship@Claremont.

DOI

10.1109/3.159537

Recommended Citation

“Far-infrared light generation at semiconductor surfaces and its spectroscopic applications,” B. I. Greene, P. N. Saeta, D. R. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992). doi: 10.1109/3.159537