We report measurements of third-harmonic generation from ultrathin crystalline silicon layers of gradually varying thickness. Both the angular and thickness dependence of the third-harmonic light generated in transmission at normal incidence are consistent with negligible surface contribution to third-harmonic generation in silicon, even under tight focusing. This work illustrates a method for distinguishing surface and bulk contributions to harmonic generation.
© 2001 American Institute of Physics
“Distinguishing surface and bulk contributions to third-harmonic generation in silicon,” P. N. Saeta and N. A. Miller*, Appl. Phys. Lett. 79, 2704 (2001). doi: 10.1063/1.1412434
This article is also available from the American Institute of Physics at http://dx.doi.org/10.1063/1.1412434.