Optical Rectification at Semiconductor Surfaces

Authors

Shun Lien Chuang, University of Illinois at Urbana-Champaign
Stefan Schmitt-Rink, AT&T Bell Laboratories
Benjamin I. Greene, AT&T Bell Laboratories
Peter N. Saeta, Harvey Mudd CollegeFollow
Anthony F. J. Levi, AT&T Bell Laboratories

Document Type

Article

Department

Physics (HMC)

Publication Date

1-1992

Abstract

We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.

Comments

This article is also available from the American Physical Society at http://link.aps.org/doi/10.1103/PhysRevLett.68.102.

Rights Information

© 1992 American Physical Society

Terms of Use & License Information

Terms of Use for work posted in Scholarship@Claremont.

DOI

10.1103/PhysRevLett.68.102

Recommended Citation

“Optical rectifcation at semiconductor surfaces,” S. L. Chuang, S. Schmitt-Rink, B. I. Greene, P. N. Saeta, and A. F. J. Levi, Phys. Rev. Lett. 68, 102 (1992).