Document Type
Article
Department
Physics (HMC)
Publication Date
12-1993
Abstract
The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) surface of a zincblende semiconductor is shown to derive principally from bulk difference‐frequency mixing. A strong modulation is observed for 1‐GW/cm2 pulses on InP, which demonstrates that the radiated FIR wave produced by bulk optical rectification is comparable to that generated by the transport of photoinjected carriers. Using the bulk rectification light as a clock, we show that more than 95% of the light produced from an InP (111) crystal by 100‐fs, 100‐μJ pulses is generated in a time shorter than the excitation pulse.
Rights Information
© 1993 American Institute of Physics
Terms of Use & License Information
DOI
10.1063/1.110127
Recommended Citation
“Short terahertz pulses from semiconductor surfaces: The importance of bulk difference-frequency mixing,” P. N. Saeta, B. I. Greene, and S. L. Chuang, Appl. Phys. Lett. 63, 3482 (1993). doi: 10.1063/1.110127
Comments
This article is also available from the American Institute of Physics at http://dx.doi.org/10.1063/1.110127.