Intervalley Scattering in GaAs and InP Probed by Pulsed Far‐Infrared Transmission Spectroscopy

Authors

Peter N. Saeta, Harvey Mudd CollegeFollow
John F. Federici, AT&T Bell Laboratories
Benjamin I. Greene, AT&T Bell Laboratories
Douglas R. Dykaar, AT&T Bell Laboratories

Document Type

Article

Department

Physics (HMC)

Publication Date

3-1992

Abstract

The dynamics of photoexcited electrons in GaAs and InP were studied using the transmission of 200‐fs pulses of far‐infrared radiation in the spectral range 15–100 cm⁻¹. Kinetic traces of the infrared transmission as a function of delay between optical excitation and infrared probe show a probe‐limited decrease in transmission followed by a more gradual (0.7–2 ps) drop to a steady value, consistent with the slow return of electrons from high‐mass satellite valleys. Infrared transmission spectra, analyzed in the context of a Drude model, reveal density‐dependent electron mobilities 3–4 times below equilibrium n‐doped values. Electron‐hole collisions likely account for the lower mobility.

Comments

This article is also available from the American Institute of Physics at http://dx.doi.org/10.1063/1.107276.

Rights Information

© 1992 American Institute of Physics

Terms of Use & License Information

Terms of Use for work posted in Scholarship@Claremont.

DOI

10.1063/1.107276

Recommended Citation

“Intervalley scattering in GaAs and InP probed by pulsed far-infrared transmission spectroscopy,” P. N. Saeta, J. F. Federici, B. I. Greene, and D. R. Dykaar, Appl. Phys. Lett. 60, 1477 (1992). doi: 10.1063/1.107276