Document Type

Article

Department

Physics (HMC)

Publication Date

4-1989

Abstract

We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.

Comments

This article is also available from the American Institute of Physics at http://dx.doi.org/10.1063/1.101302.

Rights Information

© 1989 American Institute of Physics

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