Patterning of Octadecylsiloxane Self-Assembled Monolayers on Si(100) Using Ar(3P0,2) Atoms

Authors

S. B. Hill
C. A. Haich
F. B. Dunning
G. K. Walters
J. J. McClelland
R. J. Celotta
H. G. Craighead
J. Han
David M. Tanenbaum, Pomona College

Document Type

Article

Department

Physics (Pomona)

Publication Date

1999

Keywords

organic compounds, nanotechnology, lithography, self-assembly, monolayers, atomic force microscopy, X-ray photoelectron spectra, etching, sputter etching, argon, metastable states

Abstract

We report the use of metastable Ar(³P_0,2) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly on silicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, changes in hydrophilicity, and x-ray photoelectron spectroscopy analysis. Metastable atom exposures sufficient to uniformly damage the monolayer should allow pattern transfer to the underlying Si(100) substrate following chemical and plasma etching. With optical manipulation of the incident metastable atoms, this technique could provide the basis for massively parallel nanoscale fabrication on silicon.

Rights Information

© 1999 American Vacuum Society

Recommended Citation

S.B. Hill, et al. "Patterning of Octadecylsiloxane Self-Assembled Monolayers" in the Journal of Vacuum Science & Technology B, Vol. 17, No. 3 (May/June 1999). DOI: 10.1116/1.590699.