Primary Relaxation Processes at the Band Edge of SiO₂

Authors

Peter N. Saeta, Harvey Mudd CollegeFollow
Benjamin I. Greene, AT&T Bell Laboratories

Document Type

Article

Department

Physics (HMC)

Publication Date

6-1993

Abstract

The kinetics of photoinduced defect formation in high-purity silicas has been studied by femtosecond transient absorption spectroscopy in the visible and ultraviolet. Band edge two-photon excitation produces singlet excitons which decay in 0.25 ps into defects with the absorption spectra of nonbridging oxygen hole centers (≡Si-O⋅) and silicon E’ centers (≡Si⋅). We identify these defect pairs with the self-trapped triplet exciton and the 0.25 ps decay with the motion of the photoexcited oxygen atom. Similar results were obtained with both crystalline and amorphous silica samples.

Comments

This article is also available from the American Physical Society at http://link.aps.org/doi/10.1103/PhysRevLett.70.3588.

Rights Information

© 1993 American Physical Society

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DOI

10.1103/PhysRevLett.70.3588

Recommended Citation

“Primary relaxation processes at the bandedge of SiO_2 ,” P. N. Saeta and B. I. Greene, Phys. Rev. Lett. 70, 3588 (1993). doi: 10.1103/PhysRevLett.70.3588