Visible Luminescence from Single Crystal‐Silicon Quantum Wells

Authors

Peter N. Saeta, Harvey Mudd CollegeFollow
A. C. Gallagher, University of Colorado at Boulder

Document Type

Article

Department

Physics (HMC)

Publication Date

5-1995

Abstract

Single crystal‐silicon quantum wells with SiO₂ barriers have been grown from SIMOX silicon‐on‐insulator substrates. Photoluminescence in the red and near‐infrared is observed for average well width <8 >nm, with peak signal for 2‐nm average width. The luminescence spectrum is independent of well width for SiO₂ barriers, but shifts 0.3 eV to higher energy upon removal of the upper oxide layer with HF. Both results suggest the importance of radiation from surface states.

Comments

This article is also available from the American Institute of Physics at http://dx.doi.org/10.1063/1.359430.

Rights Information

© 1995 American Institute of Physics

Terms of Use & License Information

Terms of Use for work posted in Scholarship@Claremont.

DOI

10.1063/1.359430

Recommended Citation

“Visible luminescence from single crystal-silicon quantum wells,” P. N. Saeta and A. C. Gallagher, J. Appl. Phys. 77, 4639 (1995). doi: 10.1063/1.359430