Single crystal‐silicon quantum wells with SiO2 barriers have been grown from SIMOX silicon‐on‐insulator substrates. Photoluminescence in the red and near‐infrared is observed for average well width <8 >nm, with peak signal for 2‐nm average width. The luminescence spectrum is independent of well width for SiO2 barriers, but shifts 0.3 eV to higher energy upon removal of the upper oxide layer with HF. Both results suggest the importance of radiation from surface states.
© 1995 American Institute of Physics
“Visible luminescence from single crystal-silicon quantum wells,” P. N. Saeta and A. C. Gallagher, J. Appl. Phys. 77, 4639 (1995). doi: 10.1063/1.359430