Construction of silicon nanocolumns with the scanning tunneling microscope

Authors

David M. Tanenbaum, Pomona College
R. M. Ostrom
Alan C. Gallagher

Document Type

Article

Department

Physics (Pomona)

Publication Date

1-1-1992

Keywords

Physics; Silicon; Scanning tunneling microscopy (STM); Machining; Surface structure; Microstructure; Aspect ratio; Modifications; Surface forces; Dipole interactions

Abstract

Voltage pulses to a scanning tunneling microscope (STM) are used to construct silicon columns of 30–100 Å diameter and up to 200 Å height on a silicon surface and on the end of a tungsten probe. These nanocolumns have excellent conductivity and longevity, and they provide an exceptional new ability to measure the shapes of nanostructures with a STM. This construction methodology and these slender yet robust columns provide a basis for nanoscale physics, lithography, and technology.

Comments

Previously linked to as: http://ccdl.libraries.claremont.edu/u?/irw,220

Rights Information

© 1992 David M. Tanenbaum

Terms of Use & License Information

Terms of Use for work posted in Scholarship@Claremont.

Recommended Citation

The following article appeared in "Construction of silicon nanocolumns with the scanning tunneling microscope," R. M. Ostrom, D. M. Tanenbaum, and Alan Gallagher, Appl. Phys. Lett. 61, 925 (1992), DOI:10.1063/1.107730 and may be found at http://link.aip.org/link/?APPLAB/61/925/1